Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRPBF

RS Stock No.: 827-4079PBrand: InfineonManufacturers Part No.: IRFR5410TRPBF
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRPBF
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.