P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF

RS Stock No.: 907-5151Brand: InfineonManufacturers Part No.: IRFTS9342TRPBF
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

1.75mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF
Select packaging type

P.O.A.

P-Channel MOSFET, 5.8 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS9342TRPBF
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Width

1.75mm

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Product details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.