Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF

RS Stock No.: 830-3354Brand: InfineonManufacturers Part No.: IRLR2908TRPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Mexico

Product details

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

P.O.A.

Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

P.O.A.

Infineon HEXFET N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK IRLR2908TRPBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Mexico

Product details

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.