N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK Infineon IRLS3036PBF
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
P.O.A.
2
P.O.A.
2
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| quantity | Unit price |
|---|---|
| 2 - 8 | P.O.A. |
| 10 - 18 | P.O.A. |
| 20 - 38 | P.O.A. |
| 40 - 98 | P.O.A. |
| 100+ | P.O.A. |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm