N-Channel MOSFET Transistor, 280 A, 40 V, 3-Pin TO-220 International Rectifier IRF2804PBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
280 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.02mm
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | P.O.A. |
| 10 - 49 | P.O.A. |
| 50 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
280 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.02mm