Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
430 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
165 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.9mm
Width
5.3mm
Series
HEXFET
Minimum Operating Temperature
-40 °C
Height
20.3mm
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
430 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
165 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.9mm
Width
5.3mm
Series
HEXFET
Minimum Operating Temperature
-40 °C
Height
20.3mm
