N-Channel MOSFET Transistor, 49 A, 55 V, 3-Pin TO-220AB International Rectifier IRFZ44NPBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm
P.O.A.
1
P.O.A.
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 4 | P.O.A. |
| 5 - 9 | P.O.A. |
| 10+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm