N-Channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220AB International Rectifier IRL3803PBF
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
140 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Series
LogicFET
Minimum Operating Temperature
-55 °C
Height
8.77mm
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 1 | P.O.A. |
| 2 - 4 | P.O.A. |
| 5+ | P.O.A. |
Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
140 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Series
LogicFET
Minimum Operating Temperature
-55 °C
Height
8.77mm