Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
26 W
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.75mm
Width
4.83mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.8mm
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Technical documents
Specifications
Channel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
26 W
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
15 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.75mm
Width
4.83mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.8mm