IXYS HiperFET, X2-Class N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

RS Stock No.: 168-4819Brand: IXYSManufacturers Part No.: IXFA22N65X2
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Series

HiperFET, X2-Class

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

145 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

11.05mm

Length

10.41mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.83mm

Country of Origin

United States

Product details

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Stock information temporarily unavailable.

P.O.A.

IXYS HiperFET, X2-Class N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

P.O.A.

IXYS HiperFET, X2-Class N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Series

HiperFET, X2-Class

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

145 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

11.05mm

Length

10.41mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.83mm

Country of Origin

United States

Product details

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS