IXYS HiperFET, Q-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

RS Stock No.: 920-0969Brand: IXYSManufacturers Part No.: IXFH15N100Q3
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

690 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.26mm

Maximum Operating Temperature

+150 °C

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

64 nC @ 10 V

Height

16.26mm

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Stock information temporarily unavailable.

P.O.A.

IXYS HiperFET, Q-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

P.O.A.

IXYS HiperFET, Q-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3
Stock information temporarily unavailable.

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

690 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.26mm

Maximum Operating Temperature

+150 °C

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

64 nC @ 10 V

Height

16.26mm

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS