N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXYS IXFH22N60P3
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
21.46mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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P.O.A.
30
P.O.A.
30
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
21.46mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS