IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P

Brand

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Length

38.2mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Country of Origin

United States