N-Channel MOSFET Transistor & Diode, 150 A, 150 V, 4-Pin SOT-227B IXYS IXFN150N15
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Package Type
SOT-227B
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
600 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
360 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Height
9.6mm
P.O.A.
Production pack (Tube)
5
P.O.A.
Production pack (Tube)
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 5 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Package Type
SOT-227B
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
600 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
360 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Height
9.6mm