IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2

Brand

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Typical Gate Charge @ Vgs

335 @ 10 V nC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm