N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Transistor Material
Si
Typical Gate Charge @ Vgs
240 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 4 | P.O.A. |
| 5 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100+ | P.O.A. |
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.04 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
38.2mm
Width
25.07mm
Transistor Material
Si
Typical Gate Charge @ Vgs
240 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.6mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS