IXYS HiperFET, Polar N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

RS Stock No.: 194-619PBrand: IXYSManufacturers Part No.: IXFP12N50P
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Stock information temporarily unavailable.

P.O.A.

IXYS HiperFET, Polar N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P
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Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
80P.O.A.
85P.O.A.
90P.O.A.
95P.O.A.

P.O.A.

IXYS HiperFET, Polar N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
80P.O.A.
85P.O.A.
90P.O.A.
95P.O.A.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS