N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

Brand

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

23.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Germany