MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

RS Stock No.: 871-4921PBrand: MagnaChipManufacturers Part No.: MDF16N50GTH
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Technical documents

Specifications

Brand

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.13mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Country of Origin

Korea, Republic Of

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

P.O.A.

Each (Supplied in a Tube) (ex VAT)

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Each (Supplied in a Tube) (ex VAT)

MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.13mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Country of Origin

Korea, Republic Of

Product details

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip