N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MagnaChip MDF3N50TH
Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.