Microchip N-Channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 DN2530N3-G

RS Stock No.: 829-3320Brand: MicrochipManufacturers Part No.: DN2530N3-G
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Technical documents

Specifications

Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

175 mA

Maximum Drain Source Voltage

300 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

740 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.19mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.2mm

Maximum Operating Temperature

+150 °C

Height

5.33mm

Minimum Operating Temperature

-55 °C

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip

P.O.A.

Microchip N-Channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 DN2530N3-G
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

P.O.A.

Microchip N-Channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 DN2530N3-G

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

175 mA

Maximum Drain Source Voltage

300 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

740 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.19mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.2mm

Maximum Operating Temperature

+150 °C

Height

5.33mm

Minimum Operating Temperature

-55 °C

Product details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip