Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.
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P.O.A.
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P.O.A.
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1
Technical Documents
Specifications
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.