Microchip P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP2106N3-G

RS Stock No.: 879-3283Brand: MicrochipManufacturers Part No.: VP2106N3-G
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.06mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.08mm

Height

5.33mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

Product details

Supertex P-Channel Enhancement Mode MOSFET Transistors

The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip

You may be interested in
Stock information temporarily unavailable.

P.O.A.

Microchip P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP2106N3-G
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

P.O.A.

Microchip P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP2106N3-G
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

Stock information temporarily unavailable.

Please check again later.

You may be interested in

Technical documents

Specifications

Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.06mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.08mm

Height

5.33mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

Product details

Supertex P-Channel Enhancement Mode MOSFET Transistors

The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip

You may be interested in