N-channel MOSFET,IRF640 18A 200V
Technical documents
Specifications
Brand
NEUTRALChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
15.49mm
Width
4.65mm
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
NEUTRALChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Minimum Operating Temperature
-55 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
15.49mm
Width
4.65mm