Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Standard
25
P.O.A.
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 25 - 100 | P.O.A. |
| 125 - 475 | P.O.A. |
| 500 - 1225 | P.O.A. |
| 1250 - 2475 | P.O.A. |
| 2500+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
