N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215

RS Stock No.: 124-2287Brand: NexperiaManufacturers Part No.: BSH108,215
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215

P.O.A.

N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Nexperia BSH108,215
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors