N-Channel MOSFET, 550 mA, 200 V, 3-Pin SOT-223 Nexperia BSP122,115
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
550 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
10
P.O.A.
Stock information temporarily unavailable.
10
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 10 - 40 | P.O.A. |
| 50 - 190 | P.O.A. |
| 200 - 490 | P.O.A. |
| 500 - 990 | P.O.A. |
| 1000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
550 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Minimum Operating Temperature
-55 °C
Product details