Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115

RS Stock No.: 216-9268PBrand: NexperiaManufacturers Part No.: BSP250,115
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Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.7mm

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

P.O.A.

Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115
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Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
80P.O.A.
85P.O.A.
90P.O.A.
95P.O.A.

P.O.A.

Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 5
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.
80P.O.A.
85P.O.A.
90P.O.A.
95P.O.A.

Stock information temporarily unavailable.

quantityUnit price
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.7mm

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors