Nexperia N-Channel MOSFET, 375 mA, 240 V, 3-Pin SOT-223 BSP89,115

RS Stock No.: 725-8304PBrand: NexperiaManufacturers Part No.: BSP89,115
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Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

375 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Nexperia N-Channel MOSFET, 375 mA, 240 V, 3-Pin SOT-223 BSP89,115
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Available in multiples of 10.

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110P.O.A.
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130P.O.A.
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150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Nexperia N-Channel MOSFET, 375 mA, 240 V, 3-Pin SOT-223 BSP89,115

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

375 mA

Maximum Drain Source Voltage

240 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors