Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115

RS Stock No.: 792-0917Brand: NexperiaManufacturers Part No.: BSS84AKS,115
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Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 30.

Production -

Available in multiples of 30.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

30

Available in multiples of 1
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 30.

Production -

Available in multiples of 30.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

30

Available in multiples of 1
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

160 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

You may be interested in