Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215

RS Stock No.: 112-5548Brand: NexperiaManufacturers Part No.: BST82,215
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Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

P.O.A.

Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Nexperia N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BST82,215

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

quantityUnit price
5 - 20P.O.A.
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors