Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115

RS Stock No.: 136-2144Brand: NexperiaManufacturers Part No.: NX3008CBKS,115
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

Malaysia

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P.O.A.

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115

P.O.A.

Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008CBKS,115
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.8 Ω, 7.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

Malaysia