Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Production pack (Reel)
250
P.O.A.
Stock information temporarily unavailable.
Production pack (Reel)
250
Stock information temporarily unavailable.
| quantity | Unit price | 
|---|---|
| 250 - 450 | P.O.A. | 
| 500 - 950 | P.O.A. | 
| 1000 - 2450 | P.O.A. | 
| 2500+ | P.O.A. | 
Technical documents
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
76 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.47V
Maximum Power Dissipation
1.92 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
