onsemi 30V 200mA, Dual Schottky Diode, 3-Pin SOT-23 BAT54CLT1G

RS Stock No.: 781-3929Brand: onsemiManufacturers Part No.: BAT54CLT1G
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Technical documents

Specifications

Brand

onsemi

Mounting Type

Surface Mount

Package Type

SOT-23

Maximum Continuous Forward Current

200mA

Peak Reverse Repetitive Voltage

30V

Diode Configuration

Common Cathode

Rectifier Type

Schottky Diode

Diode Type

Schottky

Pin Count

3

Maximum Forward Voltage Drop

240mV

Number of Elements per Chip

2

Diode Technology

Schottky Barrier

Peak Reverse Recovery Time

5ns

Peak Non-Repetitive Forward Surge Current

600mA

Product details

ON Semiconductor Schottky Barrier Diodes

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package

Standards

Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.

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Please check again later.

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P.O.A.

onsemi 30V 200mA, Dual Schottky Diode, 3-Pin SOT-23 BAT54CLT1G
Select packaging type

P.O.A.

onsemi 30V 200mA, Dual Schottky Diode, 3-Pin SOT-23 BAT54CLT1G
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

onsemi

Mounting Type

Surface Mount

Package Type

SOT-23

Maximum Continuous Forward Current

200mA

Peak Reverse Repetitive Voltage

30V

Diode Configuration

Common Cathode

Rectifier Type

Schottky Diode

Diode Type

Schottky

Pin Count

3

Maximum Forward Voltage Drop

240mV

Number of Elements per Chip

2

Diode Technology

Schottky Barrier

Peak Reverse Recovery Time

5ns

Peak Non-Repetitive Forward Surge Current

600mA

Product details

ON Semiconductor Schottky Barrier Diodes

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package

Standards

Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.