N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123

RS Stock No.: 124-1693Brand: onsemiManufacturers Part No.: BSS123
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.92mm

Typical Gate Charge @ Vgs

1.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.3mm

Number of Elements per Chip

1

Height

0.93mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123

P.O.A.

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.92mm

Typical Gate Charge @ Vgs

1.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.3mm

Number of Elements per Chip

1

Height

0.93mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.