onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Standard
25
P.O.A.
Standard
25
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Please check again later.
| quantity | Unit price |
|---|---|
| 25 - 100 | P.O.A. |
| 125 - 475 | P.O.A. |
| 500 - 1225 | P.O.A. |
| 1250 - 2475 | P.O.A. |
| 2500+ | P.O.A. |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor