Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS

RS Stock No.: 195-2484Brand: onsemiManufacturers Part No.: EFC2K103NUZTDG
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±8 V

Width

1.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.57mm

Typical Gate Charge @ Vgs

62 nC @ 3.8 V nC

Height

0.14mm

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P.O.A.

Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS

P.O.A.

Dual N-Channel MOSFET, 40 A, 12 V Depletion, 10-Pin WLCSP onsemi EFC2K103NUZTDGOS
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±8 V

Width

1.8mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.57mm

Typical Gate Charge @ Vgs

62 nC @ 3.8 V nC

Height

0.14mm