Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG

Brand

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

24 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.23mm

Typical Gate Charge @ Vgs

49 nC @ 4.5 V nC

Width

2.13mm

Number of Elements per Chip

2

Height

0.17mm