onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

RS Stock No.: 802-3200Brand: onsemiManufacturers Part No.: FDB035N10A
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

89 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

9.65mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A
Select packaging type

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

89 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

9.65mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.