onsemi N-Channel MOSFET, 130 A, 150 V, 3-Pin D2PAK FDB075N15A

RS Stock No.: 166-3402Brand: onsemiManufacturers Part No.: FDB075N15A
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.83mm

Country of Origin

China

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

onsemi N-Channel MOSFET, 130 A, 150 V, 3-Pin D2PAK FDB075N15A

P.O.A.

onsemi N-Channel MOSFET, 130 A, 150 V, 3-Pin D2PAK FDB075N15A
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

333 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.83mm

Country of Origin

China

Product details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.