onsemi PowerTrench Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin SOT-23 FDC6561AN
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
152 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3mm
Typical Gate Charge @ Vgs
2.3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
P.O.A.
Standard
1
P.O.A.
Standard
1
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Series
PowerTrench
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
152 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3mm
Typical Gate Charge @ Vgs
2.3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.