onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V, 8-Pin Power 33 FDMC86102LZ

RS Stock No.: 806-3507Brand: onsemiManufacturers Part No.: FDMC86102LZ
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

Power 33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

15.3 nC @ 10 V, 7.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V, 8-Pin Power 33 FDMC86102LZ
Select packaging type

P.O.A.

onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V, 8-Pin Power 33 FDMC86102LZ

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

Power 33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.3mm

Typical Gate Charge @ Vgs

15.3 nC @ 10 V, 7.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Product details

PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.