onsemi N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 FDN359BN

RS Stock No.: 166-1807Brand: onsemiManufacturers Part No.: FDN359BN
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Stock information temporarily unavailable.

P.O.A.

onsemi N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 FDN359BN

P.O.A.

onsemi N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 FDN359BN
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm

Product details

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.