N-Channel MOSFET, 12.5 A, 30 V, 8-Pin SOIC onsemi FDS6680A

RS Stock No.: 671-0605Brand: onsemiManufacturers Part No.: FDS6680A
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12.5 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 12.5 A, 30 V, 8-Pin SOIC onsemi FDS6680A
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P.O.A.

N-Channel MOSFET, 12.5 A, 30 V, 8-Pin SOIC onsemi FDS6680A
Stock information temporarily unavailable.
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Buy in bulk

quantityUnit price
5 - 20P.O.A.
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12.5 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.