onsemi 60V 6A, Dual Silicon Junction Diode, 3-Pin DPAK MBRD660CTG

RS Stock No.: 792-5631Brand: onsemiManufacturers Part No.: MBRD660CTRLG
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Technical documents

Specifications

Brand

onsemi

Mounting Type

Surface Mount

Package Type

DPAK (TO-252)

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

60V

Diode Configuration

Common Cathode

Rectifier Type

Switching

Diode Type

Silicon Junction

Pin Count

3

Maximum Forward Voltage Drop

850mV

Number of Elements per Chip

2

Diode Technology

Silicon Junction

Peak Non-Repetitive Forward Surge Current

75A

Product details

ON Semiconductor Schottky Barrier Diodes

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package

Standards

Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.

You may be interested in
onsemi 60V 6A, Dual Schottky Diode, 3-Pin DPAK MBRD660CTT4G
P.O.A.Each (In a Pack of 10) (ex VAT)

P.O.A.

onsemi 60V 6A, Dual Silicon Junction Diode, 3-Pin DPAK MBRD660CTG
Select packaging type

P.O.A.

onsemi 60V 6A, Dual Silicon Junction Diode, 3-Pin DPAK MBRD660CTG

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

You may be interested in
onsemi 60V 6A, Dual Schottky Diode, 3-Pin DPAK MBRD660CTT4G
P.O.A.Each (In a Pack of 10) (ex VAT)

Technical documents

Specifications

Brand

onsemi

Mounting Type

Surface Mount

Package Type

DPAK (TO-252)

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

60V

Diode Configuration

Common Cathode

Rectifier Type

Switching

Diode Type

Silicon Junction

Pin Count

3

Maximum Forward Voltage Drop

850mV

Number of Elements per Chip

2

Diode Technology

Silicon Junction

Peak Non-Repetitive Forward Surge Current

75A

Product details

ON Semiconductor Schottky Barrier Diodes

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

• Pb-Free
• Designed for Optimal Automated Board Assembly
• Stress protection guarding
• Epoxy Moulded Case
• Lightweight 11.7mg package

Standards

Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.

You may be interested in
onsemi 60V 6A, Dual Schottky Diode, 3-Pin DPAK MBRD660CTT4G
P.O.A.Each (In a Pack of 10) (ex VAT)