N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G

RS Stock No.: 792-5675PBrand: onsemiManufacturers Part No.: MGSF2N02ELT1G
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.6 nC @ 4 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Country of Origin

China

Product details

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G
Select packaging type

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

P.O.A.

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 onsemi MGSF2N02ELT1G
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.6 nC @ 4 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.01mm

Country of Origin

China

Product details

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor