onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

RS Stock No.: 178-7591Brand: onsemiManufacturers Part No.: NDS352AP
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Series

NDS352AP

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm

Stock information temporarily unavailable.

P.O.A.

onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

P.O.A.

onsemi P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Series

NDS352AP

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.94mm