onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G

RS Stock No.: 463-325PBrand: onsemiManufacturers Part No.: NTD3055L104T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

P.O.A.

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G
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Production pack (Reel)

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Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 20
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.
320P.O.A.
340P.O.A.
360P.O.A.
380P.O.A.

P.O.A.

onsemi N-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD3055L104T4G

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 20
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.
320P.O.A.
340P.O.A.
360P.O.A.
380P.O.A.

Stock information temporarily unavailable.

quantityUnit price
100 - 380P.O.A.
400+P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

7.4 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor