onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G

RS Stock No.: 802-1493Brand: onsemiManufacturers Part No.: NTD3055L170T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

28.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

4.7 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

P.O.A.

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

P.O.A.

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

28.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

4.7 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor