Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
7.6 nC @ 5 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Standard
20
P.O.A.
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 20 - 80 | P.O.A. |
| 100 - 380 | P.O.A. |
| 400+ | P.O.A. |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
7.6 nC @ 5 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Product details
